Electronic device and method for fabricating the same

摘要

According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, and contacted with one side surface and the other side surface of the variable resistance pattern, respectively, wherein the first stacked structure has a line shape extended in a first direction and the second stacked structure has a pillar shape; and a pillar-shaped conductive pattern contacted with one side surface of the second stacked structure, which is not contacted with the variable resistance pattern.

主权项

1. An electronic device comprising a semiconductor memory,
wherein the semiconductor memory comprises: a variable resistance pattern disposed over a substrate and extending in a first direction, the variable resistance pattern having a first side surface and a second side surface opposite to the first side surface in a second direction that crosses the first direction; a first structure comprising a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, the first structure being coupled to the first side surface of the variable resistance pattern, wherein the first structure has a line shape extending in the first direction; a second structure comprising the plurality of interlayer dielectric layers and the plurality of conductive layers which are alternately stacked over the substrate, the second structure having a first side surface coupled to the second side surface of the variable resistance pattern, wherein the second structure has a pillar shape; and a pillar-shaped conductive pattern coupled to a second side surface of the second structure, wherein the second side surface of the second structure is opposite to the first side surface of the second structure in the second direction, the second structure being disposed between the pillar-shaped conductive pattern and the variable resistance pattern.