Semiconductor device with metal-filled groove in polysilicon gate electrode

摘要

A semiconductor device includes a semiconductor substrate, a body region of a first conductivity type in the substrate, a source region of a second conductivity type opposite the first conductivity type adjacent the body region, and a trench extending into the substrate adjacent the source and body regions. The trench contains a polysilicon gate electrode insulated from the substrate. The device further includes a dielectric layer on the substrate, a gate metallization on the dielectric layer and covering part of the substrate and a source metallization on the dielectric layer and electrically connected to the source region. The source metallization is spaced apart from the gate metallization and covers a different part of the substrate than the gate metallization. A metal-filled groove in the polysilicon gate electrode is electrically connected to the gate metallization, and extends along a length of the trench underneath at least part of the source metallization.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a body region of a first conductivity type in the substrate; a source region of a second conductivity type opposite the first conductivity type adjacent the body region; a trench extending into the substrate adjacent the source and the body regions, the trench containing a polysilicon gate electrode insulated from the substrate; a dielectric layer on the substrate; a gate metallization on the dielectric layer and covering part of the substrate; a source metallization on the dielectric layer and electrically connected to the source region, the source metallization being spaced apart from the gate metallization and covering a different part of the substrate than the gate metallization; and a metal-filled groove in the polysilicon gate electrode and electrically connected to the gate metallization by one or more conductive vias extending through the dielectric layer, the metal-filled groove extending along a length of the trench directly underneath at least part of the source metallization, wherein a cross-sectional area of the metal-filled groove is reduced over part of the length of the metal-filled groove so that a resistor is formed from the part of the metal-filled groove with the reduced cross-sectional area.