Semiconductor constructions and methods of forming electrically conductive contacts

摘要

Some embodiments include methods of forming electrically conductive contacts. An opening is formed through an insulative material to a conductive structure. A conductive plug is formed within a bottom region of the opening. A spacer is formed to line a lateral periphery of an upper region of the opening, and to leave an inner portion of an upper surface of the plug exposed. A conductive material is formed against the inner portion of the upper surface of the plug. Some embodiments include semiconductor constructions having a conductive plug within an insulative stack and against a copper-containing material. A spacer is over an outer portion of an upper surface of the plug and not directly above an inner portion of the upper surface. A conductive material is over the inner portion of the upper surface of the plug and against an inner lateral surface of the spacer.

主权项

1. A method of forming an electrically conductive contact, comprising:
forming an opening through an electrically insulative material to an electrically conductive structure; forming an electrically conductive plug within a bottom region of the opening; forming a spacer to line a lateral periphery of an upper region of the opening; the spacer being over an outer portion of an upper surface of the electrically conductive plug and leaving an inner portion of the upper surface exposed; forming an electrically conductive material within the lined upper region of the opening and directly against the inner portion of the upper surface of the electrically conductive plug; forming an electrically conductive line to extend across the electrically insulative material and the electrically conductive material within the opening, and to be electrically coupled with the electrically conductive material within the opening; and wherein the electrically conductive plug comprises titanium nitride directly against copper of the electrically conductive structure, and comprises tungsten directly against the titanium nitride.