Semiconductor device

摘要

A semiconductor device includes a semiconductor substrate of a first conductivity type, a mesh-type gate electrode including first portions extending in a first direction and second portions extending in a second direction crossing the first direction over the substrate. The mesh-type gate structure may have a plurality of openings, and source regions and drain regions of second conductivity type alternately arranged in the first direction and the second direction in the substrate at locations corresponding to the openings.

主权项

1. A semiconductor device comprising:
a silicon substrate of a first conductivity type; a mesh-type gate electrode on the silicon substrate, including first portions extending in a first direction and second portions extending in a second direction orthogonal to the first direction, and having a plurality of openings; buried regions provided in a form of islands in the silicon substrate under corresponding intersection regions of the first portions and the second portions; and source regions and drain regions of a second conductivity type arranged in the silicon substrate at locations exposed by the openings, the source regions and drain regions being alternately arranged in the first direction and alternately arranged in the second direction, wherein the first direction is a <100> silicon crystal direction of the silicon substrate.