发明名称 Method of fabricating silicon carbide
摘要 A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps.
申请公布号 US9102543(B2) 申请公布日期 2015.08.11
申请号 US201214236813 申请日期 2012.08.01
申请人 LG INNOTEK CO., LTD. 发明人 Han Jung Eun;Kim Byung Sook
分类号 C01B31/36 主分类号 C01B31/36
代理机构 Saliwanchik, Lloyd & Eisenschenk 代理人 Saliwanchik, Lloyd & Eisenschenk
主权项 1. A method of fabricating silicon carbide, the method comprising: preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic liquid-phase carbon compound; and reacting the mixture, wherein the preparing of the mixture is achieved by spray-coating the carbon source on the dry silicon source, wherein the mixture is obtained without using a solvent, wherein a viscosity of the carbon source is in a range of about 20 cps to about 1000 cps.
地址 Seoul KR