发明名称 |
Method of fabricating silicon carbide |
摘要 |
A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps. |
申请公布号 |
US9102543(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201214236813 |
申请日期 |
2012.08.01 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
Han Jung Eun;Kim Byung Sook |
分类号 |
C01B31/36 |
主分类号 |
C01B31/36 |
代理机构 |
Saliwanchik, Lloyd & Eisenschenk |
代理人 |
Saliwanchik, Lloyd & Eisenschenk |
主权项 |
1. A method of fabricating silicon carbide, the method comprising:
preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic liquid-phase carbon compound; and reacting the mixture, wherein the preparing of the mixture is achieved by spray-coating the carbon source on the dry silicon source, wherein the mixture is obtained without using a solvent, wherein a viscosity of the carbon source is in a range of about 20 cps to about 1000 cps. |
地址 |
Seoul KR |