| 摘要 |
<p>The present invention provides a substrate treatment apparatus. The substrate treatment apparatus comprises: a chamber; a substrate supporting unit; and a gas supply unit. The substrate supporting unit comprises: a support plate having a first gear; a rotating susceptor where a support plate is placed; and a fixated susceptor having a first gear provided to be engaged with a second gear. The support plate is rotated by a rotational force of the rotating susceptor rotated by the first gear and the second gear in order to enable all support plates to be rotated at a same speed and a constant speed to improve uniformity during treatment of a substrate. Temperature-lowering due to gas injection to rotate the support plate is minimized to improve energy efficiency, and the susceptor is easily manufactured as treatment of an injection hole for gas injection of rotating the support plate is unnecessary.</p> |
