Method and apparatus for fabricating phosphor-coated LED dies

摘要

The present disclosure involves lighting apparatus. The lighting apparatus includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A photo-conversion layer is disposed over the second doped semiconductor layer and over side surfaces of the first and second doped semiconductor layers and the light-emitting layer. The photo-conversion layer has an angular profile.

主权项

1. A lighting apparatus, comprising:
a first doped semiconductor layer; a light-emitting layer disposed over the first doped semiconductor layer; a second doped semiconductor layer disposed over the light-emitting layer, the second doped semiconductor layer having a different type of conductivity than the first doped semiconductor layer; and a photo-conversion layer disposed over the second doped semiconductor layer and over side surfaces of the first and second doped semiconductor layers and the light-emitting layer, wherein the photo-conversion layer has an angular profile that comprises one or more angular corners disposed over the second doped semiconductor layer, wherein the one or more angular corners are defined by an upper surface and planar side surfaces of the photo-conversion layer, and wherein the upper surface and the side surfaces of the photo-conversion layer have substantially different roughness levels.