发明名称 |
In-line germanium avalanche photodetector |
摘要 |
A method for manufacturing a photodetector including growing a quantity of germanium within an optical pathway of a waveguide. The detection of a current caused by an interaction between the optical signal and the germanium is used to indicate the presence of an optical signal passing through the waveguide. |
申请公布号 |
US9105772(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201313953050 |
申请日期 |
2013.07.29 |
申请人 |
BAE Systems Information and Electronic Systems Integration Inc. |
发明人 |
Pomerene Andrew T S;Vu Vu A.;Kamocsai Robert L. |
分类号 |
G02B6/122;G02B6/42;H01L31/0232;H01L31/18;H01L31/107 |
主分类号 |
G02B6/122 |
代理机构 |
|
代理人 |
Long Daniel J. |
主权项 |
1. A photodetector comprising:
a waveguide having an optical pathway; a germanium region of the photodetector located in the optical pathway, wherein an optical signal is detected upon interacting with the germanium region of the photodetector and the optical signal passes through the waveguide; and at least two implant regions adjacent to the germanium region of the photodetector. |
地址 |
Nashua NH US |