发明名称 |
Junction barrier Schottky diode and manufacturing method thereof |
摘要 |
The present invention discloses a junction barrier Schottky (JBS) diode and a manufacturing method thereof. The JBS diode includes: an N-type gallium nitride (GaN) substrate; an aluminum gallium nitride (AlGaN) barrier layer, which is formed on the N-type GaN substrate; a P-type gallium nitride (GaN) layer, which is formed on or above the N-type GaN substrate; an anode conductive layer, which is formed at least partially on the AlGaN barrier layer, wherein a Schottky contact is formed between part of the anode conductive layer and the AlGaN barrier layer; and a cathode conductive layer, which is formed on the N-type GaN substrate, wherein an ohmic contact is formed between the cathode conductive layer and the N-type GaN substrate, and the cathode conductive layer is not directly connected to the anode conductive layer. |
申请公布号 |
US9105757(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201314040670 |
申请日期 |
2013.09.28 |
申请人 |
Richtek Technology Corporation, R.O.C. |
发明人 |
Huang Chih-Fang;Huang Tsung-Yi;Chiu Chien-Wei;Yang Tsung-Yu;Chang Ting-Fu;Hsiao Tsung-Chieh;Liu Ya-Hsien;Peng Po-Chin |
分类号 |
H01L29/872;H01L29/66;H01L29/868;H01L29/06;H01L29/20;H01L29/205 |
主分类号 |
H01L29/872 |
代理机构 |
Tung & Associates |
代理人 |
Tung & Associates |
主权项 |
1. A junction barrier Schottky (JBS) diode comprising:
an N-type gallium nitride (GaN) substrate; an aluminum gallium nitride (AlGaN) barrier layer, which is formed on the N-type GaN substrate; a P-type gallium nitride (GaN) layer, which is formed on the AlGaN barrier layer or on the N-type GaN substrate; an anode conductive layer, which is formed at least partially on the AlGaN barrier layer, wherein a Schottky contact is formed between part of the anode conductive layer and the AlGaN barrier layer; and a cathode conductive layer, which is formed on the N-type GaN substrate, wherein an ohmic contact is formed between the cathode conductive layer and the N-type GaN substrate, and the cathode conductive layer is not directly connected to the anode conductive layer; wherein the P-type GaN layer is formed on the AlGaN barrier layer, and the P-type GaN layer and the N-type GaN substrate are separated by the AlGaN barrier layer; wherein a Schottky diode is formed by the anode conductive layer, the AlGaN barrier layer, the N-type GaN substrate, and the cathode conductive layer; wherein a PIN diode is formed by the P-type GaN layer, the AlGaN barrier layer, and the N-type GaN substrate; wherein the Schottky diode and the PIN diode are connected in parallel. |
地址 |
Chupei, HsinChu TW |