发明名称 Method for manufacturing an integrated circuit and an integrated circuit
摘要 A method for manufacturing an integrated circuit may include forming an electronic circuit in or above a carrier; forming at least one metallization layer structure configured to electrically connect the electronic circuit; and forming a solid state electrolyte battery at least partially in the at least one metallization layer structure, wherein the solid state electrolyte battery is electrically connected to the electronic circuit.
申请公布号 US9107335(B2) 申请公布日期 2015.08.11
申请号 US201313769886 申请日期 2013.02.19
申请人 INFINEON TECHNOLOGIES AG 发明人 Lemke Marko;Vogt Mirko;Tegen Stefan
分类号 H05K1/16;H05K1/18;H01M4/82;H05K13/00;H05K1/02;H01G9/15;H01L23/58;H01L27/01;H01G11/84 主分类号 H05K1/16
代理机构 代理人
主权项 1. An integrated circuit, the integrated circuit comprising: an electronic circuit, which is arranged at least one of over and in a carrier; at least one metallization layer structure configured to electrically connect the electronic circuit; a solid state electrolyte battery, which is at least partially formed in the at least one metallization layer structure, wherein the solid state electrolyte battery is electrically connected to the electronic circuit; and a patterned electrically insulating base layer at least partially formed over a part of the at least one metallization layer structure, wherein the patterned electrically insulating base layer comprises a plurality of electrically insulating base layer structure elements, wherein at least one electrically conductive portion of the at least one metallization layer structure is exposed between at least two adjacent electrically insulating base layer structure elements of the plurality of electrically insulating base layer structure elements.
地址 Neubiberg DE