发明名称 |
Conductive contacts having varying widths and method of manufacturing same |
摘要 |
A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar width, and the UBM width is greater than the pillar width. |
申请公布号 |
US9105530(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201313904885 |
申请日期 |
2013.05.29 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Yen-Liang;Tseng Yu-Jen;Huang Chang-Chia;Kuo Tin-Hao;Chen Chen-Shien |
分类号 |
H01L23/498;H01L21/768;H01L23/00;H01L21/48 |
主分类号 |
H01L23/498 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A bump structure, comprising:
a contact element formed over a substrate; a passivation layer overlying the substrate, the passivation layer having a passivation opening exposing the contact element; a polyimide layer overlying the passivation layer, the polyimide layer having a polyimide opening exposing the contact element; an under bump metallurgy (UBM) feature electrically coupled to the contact element, the under bump metallurgy feature having a UBM width; and a copper pillar on the under bump metallurgy feature, a distal end of the copper pillar having a pillar width, the UBM width greater than the pillar width, wherein a portion of the copper pillar over a topmost surface of the under bump metallurgy feature has a substantially linear profile. |
地址 |
Hsin-Chu TW |