发明名称 Conductive contacts having varying widths and method of manufacturing same
摘要 A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar width, and the UBM width is greater than the pillar width.
申请公布号 US9105530(B2) 申请公布日期 2015.08.11
申请号 US201313904885 申请日期 2013.05.29
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lin Yen-Liang;Tseng Yu-Jen;Huang Chang-Chia;Kuo Tin-Hao;Chen Chen-Shien
分类号 H01L23/498;H01L21/768;H01L23/00;H01L21/48 主分类号 H01L23/498
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A bump structure, comprising: a contact element formed over a substrate; a passivation layer overlying the substrate, the passivation layer having a passivation opening exposing the contact element; a polyimide layer overlying the passivation layer, the polyimide layer having a polyimide opening exposing the contact element; an under bump metallurgy (UBM) feature electrically coupled to the contact element, the under bump metallurgy feature having a UBM width; and a copper pillar on the under bump metallurgy feature, a distal end of the copper pillar having a pillar width, the UBM width greater than the pillar width, wherein a portion of the copper pillar over a topmost surface of the under bump metallurgy feature has a substantially linear profile.
地址 Hsin-Chu TW