发明名称 Tunable resistance coatings
摘要 A method and article of manufacture of intermixed tunable resistance composite materials containing at least one of W:Al2O3, Mo:Al2O3 or M:Al2O3 where M is a conducting compound containing either W or Mo. A conducting material and an insulating material are deposited by such methods as ALD or CVD to construct composites with intermixed materials which do not have structure or properties like their bulk counterparts.
申请公布号 US9105379(B2) 申请公布日期 2015.08.11
申请号 US201313804660 申请日期 2013.03.14
申请人 UChicago Argonne, LLC 发明人 Elam Jeffrey W.;Mane Anil U.
分类号 G01T3/00;H01C17/06;C23C16/30;C23C16/455;H01C17/08;H01C17/12 主分类号 G01T3/00
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. A method of tunably forming a film of selected resistance and thickness comprising: performing at least one supercycle depositing a starting conducting material selected from the group of W, Mo, and their conducting compounds, and a starting insulating material, the supercycle comprising; performing at least one starting conducting material deposition cycle with a first starting conducting material precursor; performing a plurality of starting insulating material deposition cycles with a first starting insulating material precursor; repeating the supercycle a prescribed number of times to achieve a film with the selected resistance and thickness for an end product; controlling the film's electrical properties by varying an aspect selected from the group consisting of: (1) a ratio of starting conducting material deposition cycles to starting insulating material deposition cycles, (2) a number of consecutive starting conducting material deposition cycles within the supercycle, (3) an exposure time of the first starting conducting material precursor, (4) a partial pressure of the first starting conducting material precursor, (5) an order within the starting conducting material deposition cycle of deposition of the first starting conducting material precursor and a second starting conducting material precursor; wherein the film of selected resistance and thickness is comprised of nano-sized particulates of the conducting material dispersed within a matrix of the insulating material.
地址 Chicago IL US