发明名称 Liquid ejecting head and method for producing the same
摘要 A method for producing a liquid ejecting head of the present invention includes the steps of: forming an etching stop layer on a portion corresponding to a region in which an independent supply port is formed, on a first face of a substrate; conducting dry etching treatment for the substrate from a second face side until the etched portion reaches the etching stop layer; and removing the etching stop layer by isotropic etching to form the independent supply port, after having conducted the dry etching treatment, wherein the isotropic etching is conducted in such a state that a side etching stopper portion having etching resistance to the isotropic etching is formed in the side face perimeter of the etching stop layer.
申请公布号 US9102145(B2) 申请公布日期 2015.08.11
申请号 US201313857341 申请日期 2013.04.05
申请人 Canon Kabushiki Kaisha 发明人 Kubota Masahiko;Kanri Ryoji;Okano Akihiko;Hiramoto Atsushi;Sakurai Masataka;Fukumoto Yoshiyuki
分类号 B41J2/04;G01D15/00;G11B5/127;B41J2/14;B41J2/16 主分类号 B41J2/04
代理机构 Fitzpatrick, Cella, Harper & Scinto 代理人 Fitzpatrick, Cella, Harper & Scinto
主权项 1. A method for producing a liquid ejecting head comprising a substrate having an ejection energy generating element that generates energy for ejecting a liquid, on its first face, and an independent supply port that reaches the first face from a side of a second face that is opposite to the first face, the method comprising: (1) a step of forming an etching stop layer on a portion corresponding to a region in which the independent supply port is formed, on the first face; (2) a step of conducting a dry etching treatment for the substrate from the second face side until an etched portion reaches the etching stop layer; and (3) a step of removing the etching stop layer by isotropic etching to form the independent supply port, after having conducted the dry etching treatment, wherein the isotropic etching is conducted in such a state that a side etching stopper portion having an etching resistance to the isotropic etching is formed in a side face perimeter of the etching stop layer, and wherein the side etching stopper portion comprises a metal containing Ta as a main component.
地址 Tokyo JP