| 发明名称 | Solid state imaging device, method of manufacturing the same, and imaging apparatus | ||
| 摘要 | A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections. | ||
| 申请公布号 | US9105547(B2) | 申请公布日期 | 2015.08.11 |
| 申请号 | US201414289213 | 申请日期 | 2014.05.28 |
| 申请人 | SONY CORPORATION | 发明人 | Ohgishi Yuko |
| 分类号 | H01L21/00;H01L31/08;H01L27/146;H04N5/369 | 主分类号 | H01L21/00 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A method of manufacturing a solid state imaging device having a sensor section formed in a semiconductor substrate in order to convert incident light into an electric signal, the method comprising the step of: forming a layer having negative fixed electric charges that is formed on a light incident side of the sensor section in order to form a hole accumulation layer on a light receiving surface of the sensor section. | ||
| 地址 | JP | ||