Semiconductor device

摘要

To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming a conductive layer embedded in a first insulating layer; forming an oxide semiconductor layer over and in contact with the conductive layer and the first insulating layer; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode over the gate insulating layer; adding a dopant to the oxide semiconductor layer using the gate electrode as a mask, whereby the oxide semiconductor layer has a pair of low-resistance regions including the dopant; forming a second insulating layer over the oxide semiconductor layer and the gate electrode; forming a first wiring electrically connected to one of the pair of low-resistance regions through the second insulating layer; and forming a second wiring electrically connected to the other of the pair of low-resistance regions through the second insulating layer, wherein one of the pair of low-resistance regions is in contact with the conductive layer.