发明名称 Wafer processing method
摘要 A wafer processing method divides a wafer along a plurality of crossing streets formed on the front side of the wafer to thereby partition a plurality of regions where a plurality of devices are respectively formed. The method includes a division groove forming step of cutting the back side of the wafer along each street by using a cutting blade to thereby form a division groove along each street with a predetermined thickness left between the bottom of the division groove and the front side of the wafer, a wafer supporting step of attaching the back side of the wafer to a dicing tape supported by an annular frame, and a wafer dividing step of applying an external force to the wafer attached to the dicing tape to thereby divide the wafer into the individual devices along the streets where the division grooves are respectively formed.
申请公布号 US9105708(B2) 申请公布日期 2015.08.11
申请号 US201314013965 申请日期 2013.08.29
申请人 Disco Corporation 发明人 Uchida Fumio
分类号 H01L21/78;H01L21/67;H01L21/683;H01L21/66 主分类号 H01L21/78
代理机构 Greer Burns & Crain, Ltd. 代理人 Greer Burns & Crain, Ltd.
主权项 1. A wafer processing method of dividing a wafer formed of a wafer material along a plurality of crossing streets formed on the front side of said wafer to thereby partition a plurality of regions where a plurality of devices are respectively formed, said wafer processing method comprising: a protective member attaching step of attaching a protective member to the front side of said wafer; a division groove forming step of cutting the back side of said wafer along each street by using a cutting blade after performing said protective member attaching step to thereby form a division groove along each street with an uncut predetermined thickness of said wafer material being left between the bottom of said division groove and the front side of said wafer; a wafer supporting step of attaching the back side of said wafer to a dicing tape supported to an annular frame and peeling said protective member from the front side of said wafer after performing said division groove forming step; and a wafer dividing step of applying an external force to said wafer attached to said dicing tape after performing said wafer supporting step to thereby divide said wafer into said individual devices by breaking said uncut predetermined thickness of said wafer material along said streets where said division grooves are respectively formed.
地址 Tokyo JP