Method for forming self-aligned contacts/vias with high corner selectivity

摘要

A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer.

主权项

1. A method of etching self-aligned contact/via features in a dielectric layer disposed below a hardmask, which is disposed below a planarization layer, comprising at least one cycle, wherein each cycle comprises:
thinning the planarization layer; forming a deposition layer on the hardmask and planarization layer; and etching the dielectric layer masked by the deposition layer.