发明名称 Apparatuses and methods of operating for memory endurance
摘要 Methods of operating an apparatus such as a computing system and/or memory device for memory endurance are provided. One example method can include receiving m digits of data having a first quantity of digits represented by a first data state that is more detrimental to memory cell wear than a second data state. The m digits of data are encoded into n digits of data having a second quantity of digits represented by the first data state. The value n is greater than the value m. The second quantity is less than or equal to the first quantity. The n digits of data are stored in an apparatus having memory cells.
申请公布号 US9105350(B2) 申请公布日期 2015.08.11
申请号 US201414284825 申请日期 2014.05.22
申请人 Micron Technology, Inc. 发明人 Varanasi Chandra C.
分类号 G11C16/34;G11C16/10;G11C7/10 主分类号 G11C16/34
代理机构 Brooks, Cameron & Huebsch, PLLC 代理人 Brooks, Cameron & Huebsch, PLLC
主权项 1. A method, comprising: encoding a quantity of data into a greater quantity of data to be stored in memory cells, wherein the greater quantity of data includes a same number or fewer bits of a first data value than are included in the quantity of data, and wherein bits of the first data value are associated with more memory wear than bits of a second data value.
地址 Boise ID US
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