发明名称 |
Apparatuses and methods of operating for memory endurance |
摘要 |
Methods of operating an apparatus such as a computing system and/or memory device for memory endurance are provided. One example method can include receiving m digits of data having a first quantity of digits represented by a first data state that is more detrimental to memory cell wear than a second data state. The m digits of data are encoded into n digits of data having a second quantity of digits represented by the first data state. The value n is greater than the value m. The second quantity is less than or equal to the first quantity. The n digits of data are stored in an apparatus having memory cells. |
申请公布号 |
US9105350(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201414284825 |
申请日期 |
2014.05.22 |
申请人 |
Micron Technology, Inc. |
发明人 |
Varanasi Chandra C. |
分类号 |
G11C16/34;G11C16/10;G11C7/10 |
主分类号 |
G11C16/34 |
代理机构 |
Brooks, Cameron & Huebsch, PLLC |
代理人 |
Brooks, Cameron & Huebsch, PLLC |
主权项 |
1. A method, comprising:
encoding a quantity of data into a greater quantity of data to be stored in memory cells, wherein the greater quantity of data includes a same number or fewer bits of a first data value than are included in the quantity of data, and wherein bits of the first data value are associated with more memory wear than bits of a second data value. |
地址 |
Boise ID US |