发明名称 Adhesive film, method of manufacturing semiconductor device, and semiconductor device
摘要 Provided is an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, and related methods of manufacturing a semiconductor device, and semiconductor devices. Provided is an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 μm or more and 260 μm or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 μm or more and 200 μm or less.
申请公布号 US9105754(B2) 申请公布日期 2015.08.11
申请号 US201313929612 申请日期 2013.06.27
申请人 NITTO DENKO CORPORATION 发明人 Shishido Yuichiro;Misumi Sadahito;Onishi Kenji
分类号 H01L23/00;H01L23/31;H01L25/00;H01L25/03 主分类号 H01L23/00
代理机构 Knobbe Martens Olson and Bear, LLP 代理人 Knobbe Martens Olson and Bear, LLP
主权项 1. An adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, the adhesive film comprises an epoxy resin and a phenol resin, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 μm or more and 260 μm or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 μm or more and 200 μm or less, wherein the first semiconductor element is embedded within the adhesive film and the second semiconductor element is adhered to the adhesive film on a side of the adhesive film that is not contacting the first semiconductor element.
地址 Osaka JP