Three-dimensional nonvolatile memory devices including interposed floating gates

摘要

Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.

主权项

1. A three-dimensional nonvolatile memory device, comprising:
a stacked structure including a plurality of conductive layers and insulating layers which are stacked alternately and repeatedly on a substrate; a plurality of channel pillars penetrating the stacked structure to be connected to the substrate; and a plurality of data storage layers disposed between the conductive layers and the channel pillars and surrounding the channel pillars; wherein the data storage layers are vertically and horizontally spaced apart from each other.