| 发明名称 | Single crystal diamond prepared by CVD | ||
| 摘要 | A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond. | ||
| 申请公布号 | US9103050(B2) | 申请公布日期 | 2015.08.11 |
| 申请号 | US201313838112 | 申请日期 | 2013.03.15 |
| 申请人 | Element Six Technologies Limited | 发明人 | Scarsbrook Geoffrey Alan;Martineau Philip Maurice;Collins John Lloyd;Sussmann Ricardo Simon;Dorn Bärbel Susanne Charlotte;Whitehead Andrew John;Twitchen Daniel James |
| 分类号 | C30B29/04;C30B25/10;C30B25/00 | 主分类号 | C30B29/04 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. Single crystal CVD diamond having: (a) a level of any single impurity of not greater than 5 ppm and a total impurity content of not greater than 10 ppm wherein impurity excludes hydrogen and its isotopic forms, and (d) in electron paramagnetic resonance (EPR), a single substitutional nitrogen centre [N—C]0 at a concentration <40 ppb. | ||
| 地址 | Didcot, Oxfordshire GB | ||