发明名称 |
Etching method for manufacturing MEMS device |
摘要 |
An etching method for manufacturing MEMS devices is provided. The method includes steps of: providing a substrate including a first surface and a second surface opposite to the first surface, wherein a base structure, a sacrificial structure and at least one adhesion layer are arranged on the first surface of the substrate, the adhesion layer is disposed between the base structure and the sacrificial structure, the base structure is disposed between the adhesion layer and the substrate; performing a surface grinding process on the second surface of the substrate; performing a first plasma etching process by using a first mixed gas to remove the sacrificial structure, wherein the first mixed gas includes oxygen and a first nitrogen-based gas; and performing a second plasma etching process by using a second mixed gas to remove the adhesion layer, wherein the second mixed gas includes a second nitrogen-based base gas and a fluorine-based gas. |
申请公布号 |
US9107017(B1) |
申请公布日期 |
2015.08.11 |
申请号 |
US201414316769 |
申请日期 |
2014.06.26 |
申请人 |
United Microelectronics Corporation |
发明人 |
Chiu Yu-Hsiang;Wang Jeng-Ho;Lu Hsin-Yi;Hsu Chang-Sheng |
分类号 |
H01L21/3065;H04R31/00;H01L21/304 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
Tan Ding Yu |
主权项 |
1. An etching method for manufacturing MEMS devices, comprising:
providing a substrate including a first surface and a second surface opposite to the first surface, arranging a base structure, a sacrificial structure and at least one adhesion layer on the first surface of the substrate, wherein the adhesion layer is disposed between the base structure and the sacrificial structure, the base structure is disposed between the adhesion layer and the substrate; performing a surface grinding process on the second surface of the substrate; performing a first plasma etching process by using a first mixed gas to remove the sacrificial structure, wherein the first mixed gas comprising oxygen and a first nitrogen-based gas; and performing a second plasma etching process by using a second mixed gas to remove the adhesion layer, wherein the second mixed gas includes a second nitrogen-based base gas and a fluorine-based gas. |
地址 |
Hsinchu TW |