Micro-light-emitting diode

摘要

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first dielectric layer, and a first electrode. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The first dielectric layer is disposed on the second type semiconductor layer. The first dielectric layer has at least one opening therein to expose at least one part of the second type semiconductor layer. A first shortest distance between an edge of the opening of the first dielectric layer and a side surface of the second type semiconductor layer is greater than or equal to 1 μm. The first electrode is partially disposed on the first dielectric layer and is electrically coupled with the exposed part of the second type semiconductor layer through the opening of the first dielectric layer.

主权项

1. A micro-light-emitting diode (micro-LED), comprising:
a first type semiconductor layer; a second type semiconductor layer disposed on or above the first type semiconductor layer; a first dielectric layer disposed on the second type semiconductor layer, the first dielectric layer having at least one opening therein to expose at least one part of the second type semiconductor layer, wherein a first shortest distance between an edge of the opening of the first dielectric layer and a side surface of the second type semiconductor layer is greater than or equal to 1 μm; and a first electrode partially disposed on the first dielectric layer and electrically coupled with the exposed part of the second type semiconductor layer through the opening of the first dielectric layer.