DUV photoresist process

摘要

DUV lithography process that eliminates post exposure baking of a photoresist. Thick photoresist may be processed to obtain enhanced sidewall profiles for microelectronic devices.

主权项

1. A method of forming a pattern in a DUV lithography process, the method comprising:
providing a photoresist on a substrate to form a coating; heating the coating prior to exposure; exposing a portion of the coating at a wavelength between 248 nm and 300 nm while irradiating the coating at a dosage from 160 mJ/cm2 to 200 mJ/cm2, inclusive; and developing the coating to form a pattern, without performing a post exposure bake prior to developing the coating.