发明名称 Low-inductance power semiconductor assembly
摘要 A low-inductive power semiconductor assembly is provided in which semiconductor switches are arranged behind one another in a main current path.
申请公布号 US9106124(B2) 申请公布日期 2015.08.11
申请号 US201113040348 申请日期 2011.03.04
申请人 Infineon Technologies AG 发明人 Bayerer Reinhold;Domes Daniel
分类号 H05K7/02;H02M7/00;H01L25/16 主分类号 H05K7/02
代理机构 Murphy, Bilak & Homiller, PLLC 代理人 Murphy, Bilak & Homiller, PLLC
主权项 1. A power semiconductor assembly, comprising: a circuit carrier; a plurality of half-bridges each of which comprises a plurality of power switches, the power switches of each half-bridge being integrated in discrete semiconductor chips and connected in series directly or indirectly to a phase output of that half-bridge, the semiconductor chips of each half-bridge being arranged next to one another on the circuit carrier in a first direction, the half-bridges being arranged next to one another on the circuit carrier in a second direction perpendicular to the first direction; and a plurality of flat conductor strips disposed above the half-bridges and electrically insulated from one another by a dielectric, the plurality of conductor strips electrically connecting the at least two half-bridges to each other; wherein a main current direction of each half-bridge extends parallel to the second direction, wherein a main current direction of the flat conductor strips extends parallel to the second direction.
地址 Neubiberg DE
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