Semiconductor component with improved dynamic behavior

摘要

Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.

主权项

1. A semiconductor component, comprising:
a semiconductor body; a first emitter region of a first conductivity type in the semiconductor body; a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body; a base region of one of the first and second conductivity types arranged between the first emitter region and the second emitter region; at least two higher doped regions of the same conductivity type as the base region and arranged in the base region; and wherein the at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body, spaced apart from the first emitter region and the second emitter region, and separated from one another only by sections of the base region; wherein sections of the base region are located between the at least two higher doped regions and the first emitter region; and wherein a doping concentration is substantially homogenous in the sections of the base region that separate the at least two higher doped regions from one another in the lateral direction.