Method for enhancing channel strain

摘要

An apparatus includes a substrate having a strained channel region, a dielectric layer over the channel region, first and second conductive layers over the dielectric layer having a characteristic with a first value, and a strain-inducing conductive layer between the conductive layers having the characteristic with a second value different from the first value. A different aspect involves an apparatus that includes a substrate, first and second projections extending from the substrate, the first projection having a tensile-strained first channel region and the second projection having a compression-strained second channel region, and first and second gate structures engaging the first and second projections, respectively. The first gate structure includes a dielectric layer, first and second conductive layers over the dielectric layer, and a strain-inducing conductive layer between the conductive layers. The second gate structure includes a high-k dielectric layer adjacent the second channel region, and a metal layer.

主权项

1. A method comprising:
providing a substrate; forming a projection extending upwardly from the substrate, the projection having a channel region therein; forming a gate structure engaging the projection adjacent to the channel region, the gate structure having spaced first and second conductive layers and a strain-inducing conductive layer disposed between the first and second conductive layers; forming a capping layer over the gate structure; imparting strain to the channel region, including performing a heat treatment on the gate structure; and removing the capping layer; wherein the imparting strain is carried out in a manner that imparts tensile strain to the channel region; wherein the performing the heat treatment includes performing a rapid thermal anneal and a millisecond anneal; wherein the performing the rapid thermal anneal is carried out at a temperature between approximately 990 and 1010° C.; and wherein the performing the millisecond anneal is carried out at a temperature of approximately 1250° C.