Etching method

摘要

An etching method can selectively etch a second region formed of silicon oxide in a target object with respect to a first region formed of silicon in the target object. The etching method includes (a) processing the target object with plasma of a first processing gas containing fluorocarbon and fluorohydrocarbon by generating the plasma of the first processing gas with a microwave, and (b) after the processing of the target object with the plasma of the first processing gas, processing the target object with plasma of a second processing gas containing fluorocarbon by generating the plasma of the second processing gas with the microwave.

主权项

1. An etching method of selectively etching a second region formed of silicon oxide in a target object with respect to a first region formed of silicon in the target object, a side surface of the second region being in contact with a side surface of the first region, the etching method comprising:
processing the target object with plasma of a first processing gas containing fluorocarbon and fluorohydrocarbon by generating the plasma of the first processing gas with a microwave and forming a protective film on the first region and the second region; and after the processing of the target object with the plasma of the first processing gas and forming the protective film, processing the target object with plasma of a second processing gas containing fluorocarbon by generating the plasma of the second processing gas with the microwave.