Semiconductor device and related fabrication methods

摘要

Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure (100) includes a trench gate structure (114), a lateral gate structure (118), a body region (124) having a first conductivity type, a drain region (125) and first and second source regions (128, 130) having a second conductivity type. The first and second source regions (128, 130) are formed within the body region (124). The drain region (125) is adjacent to the body region (124) and the first source region (128) is adjacent to the trench gate structure (114), wherein a first portion of the body region (124) disposed between the first source region (128) and the drain region (125) is adjacent to the trench gate structure (114). A second portion of the body region (124) is disposed between the second source region (130) and the drain region (125), and the lateral gate structure (118) is disposed overlying the second portion of the body region (124).

主权项

1. A semiconductor device structure comprising:
a trench gate structure; a lateral gate structure; a body region of semiconductor material having a first conductivity type; a first source region of semiconductor material having a second conductivity type, the first source region being formed within the body region adjacent to the trench gate structure; a second source region of semiconductor material having the second conductivity type, the second source region being formed within the body region; a drain region of semiconductor material having the second conductivity type, the drain region being adjacent to the body region, wherein:
a first portion of the body region disposed between the first source region and the drain region is adjacent to the trench gate structure; andthe lateral gate structure overlies a second portion of the body region disposed between the second source region and the drain region.