发明名称 |
Bonded semiconductor structure with SiGeC layer as etch stop |
摘要 |
A semiconductor structure is formed with a first wafer (e.g. a handle wafer) and a second wafer (e.g. a bulk silicon wafer) bonded together. The second wafer includes an active layer, which in some embodiments is formed before the two wafers are bonded together. A substrate is removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeC layer as an etch stop. In some embodiments, the SiGeC layer is then removed; but in some other embodiments, it remains as a strain-inducing layer. |
申请公布号 |
US9105689(B1) |
申请公布日期 |
2015.08.11 |
申请号 |
US201414223060 |
申请日期 |
2014.03.24 |
申请人 |
Silanna Semiconductor U.S.A., Inc. |
发明人 |
Fanelli Stephen A. |
分类号 |
H01L21/30;H01L21/46;H01L21/762;H01L29/78;H01L29/06 |
主分类号 |
H01L21/30 |
代理机构 |
The Mueller Law Office, P.C. |
代理人 |
The Mueller Law Office, P.C. |
主权项 |
1. A method comprising:
forming a first wafer having a first bonding material; forming a second wafer having a substrate, a SiGeC layer, an active layer and a second bonding material, the active layer being between the SiGeC layer and the second bonding material; bonding the second wafer to the first wafer at the first and second bonding materials; and removing the substrate using the SiGeC layer as an etch stop. |
地址 |
San Diego CA US |