Memory device and driving circuit adopted by the memory device

摘要

A memory device and a driving circuit adopted by the memory device are disclosed. The driving circuit includes a power line, a ground line, and first and second data lines coupled between the power line and the ground line. Each data line comprises 4 driver groups. For the first data line, the first driver group contains an even-stage inverter driver, the second driver group contains the even-stage inverter driver, the third driver group contains an odd-stage inverter driver, and the fourth driver group contains the odd-stage inverter driver. For the second data line, the first driver group contains the odd-stage inverter driver, the second driver group contains the even-stage inverter driver, the third driver group contains the even-stage inverter driver, and the fourth driver group contains the odd-stage inverter driver. The even-stage inverter driver comprises an even number of inverters. The odd-stage inverter driver comprises an odd number of inverters.

主权项

1. A driving circuit, comprising:
a power line; a ground line; first and second data lines, coupled between the power line and the ground line, wherein each data line comprises 4 driver groups; wherein for the first data line, the first driver group contains an even-stage inverter driver, the second driver group contains the even-stage inverter driver, the third driver group contains an odd-stage inverter driver, and the fourth driver group contains the odd-stage inverter driver; for the second data line, the first driver group contains the odd-stage inverter driver, the second driver group contains the even-stage inverter driver, the third driver group contains the even-stage inverter driver, and the fourth driver group contains the odd-stage inverter driver; the even-stage inverter driver comprises an even number of inverters; and the odd-stage inverter driver comprises an odd number of inverters.