Semiconductor device and method of manufacturing semiconductor device

摘要

The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a second transistor including a second impurity layer containing boron and carbon, or arsenic or antimony, a second epitaxial layer formed above the second impurity layer, a second gate electrode formed above the second epitaxial layer with a second gate insulating film thinner than the first gate insulating film formed therebetween, and second source/drain regions.

主权项

1. A method of manufacturing a semiconductor device comprising:
forming a first impurity layer in a first region of a semiconductor substrate by implanting a first impurity of a first conductivity type in the first region; forming a second impurity layer in a second region of the semiconductor substrate by implanting a second impurity of the first conductivity type in the second region, a diffusion constant of the second impurity being smaller than a diffusion constant of the first impurity; forming a semiconductor layer above the semiconductor substrate after forming the second impurity layer; forming a first gate insulating film above the semiconductor layer in the first region and the second region; removing the first gate insulating film in the second region; forming a second gate insulating film thinner than the first gate insulating film above the semiconductor layer in the second region; and forming a first gate electrode above the first gate insulating film and a second gate electrode above the second gate insulating film, wherein a concentration of the first impurity in the semiconductor layer of the first region is lower than a concentration of the first impurity in the first impurity layer, and a concentration of the second impurity in the semiconductor layer of the second region is lower than a concentration of the second impurity in the second impurity layer.