Semiconductor component having a second passivation layer having a first opening exposing a bond pad and a plurality of second openings exposing a top surface of an underlying first passivation layer

摘要

A conductive feature on a semiconductor component is disclosed. A first passivation layer is formed over a substrate. A bond pad is formed over the first passivation layer. A second passivation layer overlies the first passivation layer and the bond pad. The second passivation layer has a first opening overlying the bond pad and a plurality of second openings exposing a top surface of the first passivation layer. A buffer layer overlies the second passivation layer and fills the plurality of second openings. The buffer layer has a third opening overlapping the first opening and together exposes a portion the bond pad. The combined first opening and third opening has sidewalls. An under bump metallurgy (UBM) layer overlies the sidewalls of the combined first opening and third opening, and contacts the exposed portion of the bond pad. A conductive feature overlies the UBM layer.

主权项

1. A semiconductor component, comprising:
a first passivation layer over a substrate; a bond pad overlying the first passivation layer; a second passivation layer overlying the first passivation layer and the bond pad, the second passivation layer having a first opening and a plurality of second openings, wherein the first opening overlies the bond pad, the plurality of the second openings exposes a top surface of the first passivation layer, and each second opening of the plurality of second openings is spaced from the first opening and from a conductive interconnect connected to the bond pad, wherein a region of the second passivation layer disposed between a first opening and a second opening of the plurality of second openings has a contiguous dielectric composition interfacing the first passivation layer and extending from the first opening to the second opening; at least one conductive interconnect underlying the second passivation layer, the at least one conductive interconnect connected to the bond pad and extending laterally away from the bond pad to a plurality of conductive vias disposed a distance from the bond pad, wherein a first group of the plurality of second openings surrounds the conductive interconnect and plurality of conductive vias; a buffer layer overlying the second passivation layer and filling the plurality of second openings, the buffer layer having a third opening overlapping the first opening and together exposing a portion the bond pad, wherein the combined first opening and third opening has sidewalls; and a conductive feature overlying the portion of the bond pad.