| 摘要 |
Provided are a semiconductor device having the high aperture ratio and the low power consumption, or a method for manufacturing the same. According to the present invention, the semiconductor device comprises: a pixel unit having a first thin film transistor; and a driving circuit unit having a second thin film transistor. The first thin film transistor includes a gate electrode layer, a gate insulation layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. The gate electrode layer, the gate insulation layer, the semiconductor layer, the source electrode layer, and the drain electrode layer of the first thin film transistor have transparency. A gate electrode layer of the second thin film transistor has a material different from the gate electrode layer of the first thin film transistor, and has a conductive layer having resistance lower than the source electrode layer of the first thin film transistor. A source electrode layer and a drain electrode layer of the second thin film transistor have a material different from the source electrode layer and the drain electrode layer of the first thin film transistor, and have a conductive layer having resistance lower than the source electrode layer and the drain electrode layer of the first thin film transistor. |
