| 摘要 |
The present invention relates to a substrate processing apparatus which is to maintain the high operation efficiency even in an apparatus using a shower head. To this end, the substrate processing apparatus of the present invention comprises: a first gas supply system connected to a raw gas source, and including a raw gas supply pipe installed with a raw gas supply control unit; a second gas supply system connected to a reaction gas source, and including a reaction gas supply pipe installed with a reaction gas supply control unit; a third gas supply system connected to a cleaning gas source, and including the reaction gas supply pipe installed with a cleaning gas supply control unit; a shower head unit including a buffer chamber connected with the first, second, and third gas supply systems; a process chamber installed below the shower head, and accommodating a substrate holding unit for holding a substrate; a plasma generation area switching unit for switching the plasma generation of the buffer chamber and the process chamber; a plasma generation unit including the plasma generation area switching unit and power; and a control unit for controlling at least the raw gas supply unit, the reaction gas supply control unit, and the plasma generation unit. |
