| 摘要 |
The present invention is to enhance the performance of a semiconductor device. In an embodiment, for example, time for film deposition is increased from 4.6 to 6.9 seconds. In other words, in the embodiment, the present invention increases the thickness of a tantalum nitride film by increasing the time for film deposition. More specifically, in the embodiment, the time for film deposition is increased to make the thickness of the tantalum nitride film formed on a lower part of the connecting hole connected to a wide wiring in the range of 5-10 nm inclusive. |
