| 摘要 |
<p>The present invention relates to a method of manufacturing a semiconductor device suitable for miniature. It includes a first transistor, a second transistor located on the first transistor, an insulating layer between the first transistor and the second transistor, a line located between the first transistor and the insulating layer, and an electrode. The electrode is overplayed with the line. The insulating layer can reduce the diffusion of hydrogen or water. The channel of the first transistor has single crystal semiconductor. The channel of the second transistor has oxide semiconductor. The gate electrode of the second transistor includes the same material as the electrode.</p> |
