发明名称 |
TRANSISTORS AVEC DIFFERENTS NIVEAUX DE TENSIONS DE SEUIL ET ABSENCE DE DISTORSIONS ENTRE NMOS ET PMOS |
摘要 |
<p>The invention relates to an integrated circuit comprising a semi-conducting substrate and first and second cells. Each cell comprises first and second transistors of nMOS and pMOS type including first and second gate stacks including a gate metal. There are first and second ground planes under the first and second transistors and an oxide layer extending between the transistors and the ground planes. The gate metals of the nMOS and of a pMOS exhibit a first work function and the gate metal of the other pMOS exhibiting a second work function greater than the first work function. The difference between the work functions is between 55 and 85 meV and the first work function Wf1 satisfies the relation Wfmg−0.04−0.005*Xge<Wf1<Wfmg−0.03−0.005*Xge.</p> |
申请公布号 |
FR3007577(B1) |
申请公布日期 |
2015.08.07 |
申请号 |
FR20130055796 |
申请日期 |
2013.06.19 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
WEBER OLIVIER;PLANES NICOLAS;RANICA ROSSELLA |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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