发明名称 |
THROUGH WAFER VIA DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>The present invention relates to a through wafer via device (10) comprising a wafer (12) made of a wafer material and having a first wafer surface (12a) and a second wafer surface (12b) opposing the first wafer surface (12a). The through wafer via device (10) further comprises a plurality of side by side first trenches (14) provided with a conductive material and extending from the first wafer surface (12a) into the wafer (12) such that a plurality of spacers (16) of the wafer material are formed between the first trenches (14). The through wafer via device (10) further comprises a second trench (18) provided with the conductive material and extending from the second wafer surface (12b) into the wafer (12) the second trench (18) being connected to the first trenches (14). The through wafer via device (10) further comprises a conductive layer (20) made of the conductive material and formed on the side of the first wafer surface (12a) the conductive material filling the first trenches (14) such that the first conductive layer (20) has a substantially planar and closed surface.</p> |
申请公布号 |
IN2550CHN2014(A) |
申请公布日期 |
2015.08.07 |
申请号 |
IN2014CH02550 |
申请日期 |
2014.04.03 |
申请人 |
KONINKLIJKE PHILIPS N.V. |
发明人 |
DEKKER RONALD;MARCELIS BOUT;MULDER MARCEL;MAUCZOK RUEDIGER |
分类号 |
H01L21/768;H01L23/48;H01L23/498 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|