发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 The present invention relates to a substrate processing apparatus which is to suppress an attachment even in a space above a gas guide in a shower head. To this end, the substrate processing apparatus of the present invention comprises: a process chamber for processing a substrate; a buffer chamber installed above the process chamber, and having a dispersion plate to uniformly supply gas to the process chamber; a process gas supply hole having a process gas supply unit connected to the upstream in a gas supply direction, and installed in a ceiling unit of the buffer chamber; an inert gas supply hole having an inert gas supply unit connected to the upstream in a gas supply direction, and installed in the ceiling unit; a gas guide including a foundation unit of a main shape which is connected to a surface of the downstream of the ceiling part to allow the process gas supply hole to be positioned in an inner circumferential side and allow the inert gas supply hole to be positioned in an outer circumferential side, and disposed above the dispersion plate; a process chamber discharging unit for discharging atmosphere of the process chamber, and installed below the process chamber; and an a control unit for controlling at least the process gas supply unit, the inert gas supply unit, and the process chamber discharging unit.
申请公布号 KR20150090985(A) 申请公布日期 2015.08.07
申请号 KR20140034839 申请日期 2014.03.25
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 YANAI HIDEHIRO;ASHIHARA HIROSHI;SANO ATSUSHI;TAKASAKI TADASHI
分类号 H01L21/02;H01L21/205 主分类号 H01L21/02
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