| 摘要 |
Provided is a fin structure for a fin field effect transistor (FinFET) device. A device comprises a substrate; a first semiconductor material arranged on the substrate; a shallow trench isolation (STI) area arranged on the substrate, and formed on facing side surfaces of the first semiconductor material; and a second semiconductor material including a first fin and a second fin arranged on the STI area, wherein the first fin is separated from the second fin by width of the first semiconductor material. The fin structure includes a first fin, an upper surface of the first semiconductor material arranged between the first fin and the second fin, and a gate layer formed on the second fin, thereby being used in generating a FinFET device. |
