发明名称 |
DISPOSITIF MICROÉLECTRONIQUE A NIVEAUX MÉTALLIQUES D'INTERCONNEXION CONNECTES PAR DES VIAS PROGRAMMABLES |
摘要 |
<p>A microelectronic device, including: a substrate and a plurality of metal interconnection levels stacked on the substrate; a first metal line of a given metal interconnection level; a second metal line of another metal interconnection level located above the given metal interconnection level, the first and second lines are interconnected via at least one semiconductor connection element extending in a direction forming a nonzero angle with the first metal lines and the second metal line; and a gate electrode capable of controlling conduction of the semiconductor connection element.</p> |
申请公布号 |
FR2962595(B1) |
申请公布日期 |
2015.08.07 |
申请号 |
FR20100055467 |
申请日期 |
2010.07.06 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
ERNST THOMAS;MOREL PAUL-HENRY;MAITREJEAN SYLVAIN |
分类号 |
H01L23/535;H01L21/768 |
主分类号 |
H01L23/535 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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