发明名称 WORKPIECE CUTTING METHOD
摘要 The object cutting method comprises a step of locating a converging point of laser light within a monocrystal sapphire substrate, while using a rear face of the monocrystal sapphire substrate as an entrance surface of the laser light, and relatively moving the converging point along each of a plurality of lines to cut set parallel to the m-plane and rear face of the substrate, so as to form a modified region within the substrate along each line and cause a fracture to reach a front face. In this step, t−[(d/2)−m]/tan α<Z<t−e is satisfied, where e is the minimum allowable distance from a position where the converging point is located to the front face, and m is the amount of meandering of the fracture in the front face.
申请公布号 US2015217399(A1) 申请公布日期 2015.08.06
申请号 US201314422367 申请日期 2013.08.01
申请人 HAMAMATSU PHOTONICS K.K. 发明人 TAJIKARA Yoko;YAMADA Takeshi
分类号 B23K26/00;B28D5/00 主分类号 B23K26/00
代理机构 代理人
主权项 1. An object cutting method for manufacturing a plurality of light-emitting elements by cutting an object to be processed, comprising a monocrystal sapphire substrate having front and rear faces forming an angle corresponding to an off-angle with c-plane and an element layer including a plurality of light-emitting element parts arranged in a matrix on the front face, with respect to each of the light-emitting element parts, the method comprising: a first step of locating a converging point of laser light within the monocrystal sapphire substrate, while using the rear face as an entrance surface of laser light in the monocrystal sapphire substrate, and relatively moving the converging point along each of a plurality of first lines to cut set parallel to m-plane of the monocrystal sapphire substrate and the rear face, so as to form first modified regions within the monocrystal sapphire substrate along each of the first lines and cause a first fracture occurring from the first modified region to reach the front face; and a second step of exerting an external force on the object along each of the first lines after the first step, so as to extend the first fracture, thereby cutting the object along each of the first lines; wherein, in the first step, the converging point is relatively moved along each of the first lines while using the rear face as the entrance surface and locates the converging point within the monocrystal sapphire substrate so as to satisfy t−[(d/2)−m]/tan α<Z<t−e, where e is the minimum allowable distance from a position where the converging point is located to the front face, t is the thickness of the monocrystal sapphire substrate, Z is the distance from the rear face to the position where the converging point is located, d is the width of a street region extending in a direction parallel to the m-plane between the light-emitting element parts adjacent to each other, m is the amount of meandering of the first fracture in the front face, and a is the angle formed between the direction perpendicular to the rear face and the extending direction of the first fracture.
地址 Hamamatsu-shi, Shizuoka JP