发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having stable electrical characteristics; or provide a transistor having less current in a non-conductive state; or provide a transistor having a large current in a conductive state; or provide a semiconductor device having the above-described transistor; or provide a tough semiconductor device.SOLUTION: A semiconductor device comprises: a first transistor using silicon; an aluminum oxide film on the first transistor; and a second transistor which is on the aluminum oxide and uses an oxide semiconductor, in which the oxide semiconductor has a hydrogen concentration lower than that of silicon. |
申请公布号 |
JP2015144265(A) |
申请公布日期 |
2015.08.06 |
申请号 |
JP20140259602 |
申请日期 |
2014.12.23 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;TANAKA TETSUHIRO;SUZAWA HIDEOMI;YAMANE YASUMASA;SATO YUHEI;TEZUKA YOSHIAKI |
分类号 |
H01L21/336;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/088;H01L27/092;H01L27/108;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|