发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a transistor having stable electrical characteristics; or provide a transistor having less current in a non-conductive state; or provide a transistor having a large current in a conductive state; or provide a semiconductor device having the above-described transistor; or provide a tough semiconductor device.SOLUTION: A semiconductor device comprises: a first transistor using silicon; an aluminum oxide film on the first transistor; and a second transistor which is on the aluminum oxide and uses an oxide semiconductor, in which the oxide semiconductor has a hydrogen concentration lower than that of silicon.
申请公布号 JP2015144265(A) 申请公布日期 2015.08.06
申请号 JP20140259602 申请日期 2014.12.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;TANAKA TETSUHIRO;SUZAWA HIDEOMI;YAMANE YASUMASA;SATO YUHEI;TEZUKA YOSHIAKI
分类号 H01L21/336;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/088;H01L27/092;H01L27/108;H01L29/786 主分类号 H01L21/336
代理机构 代理人
主权项
地址