发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves high heat radiation performance and has excellent low on-resistance.SOLUTION: A semiconductor device according to one embodiment includes: a semiconductor chip; a metal lead frame; and a resin sealing part; and a metal connector. The semiconductor chip has a surface electrode. The lead frame includes: a bed part on which the semiconductor chip is mounted on a surface; and a post part which is provided separated from the bed part. The sealing part is formed so as to cover the semiconductor chip. The connector includes: a chip joint part joined to a surface of the semiconductor chip; a post joint part joined to a surface of the post part of the lead frame; and a connection part which connects the chip joint part with the post joint part. The chip joint part is formed thicker than the post joint part and the connection part and at least a part of the chip joint part is exposed from a surface of the sealing part.
申请公布号 JP2015144188(A) 申请公布日期 2015.08.06
申请号 JP20140016883 申请日期 2014.01.31
申请人 TOSHIBA CORP 发明人 FUKUI TAKESHI
分类号 H01L23/48;H01L21/60;H01L23/34 主分类号 H01L23/48
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