VOLTAGE AND TEMPERATURE INDEPENDENT MIM CAPACITORS

摘要

MIM capacitors that are temperature and/or voltage independent, and a methodology for formulating the MIM capacitors for use in semiconductor integrated circuits, is provided. Vertical MIM capacitive structures include at least two vertically separated electrodes and a capacitor dielectric that includes portions of different dielectric materials provided in a desired area ratio. The disclosure provided for selecting dielectrics and dielectric thicknesses, determining an area ratio that produces temperature and/or voltage independent MIM capacitors, and forming capacitive devices with the desired area ratio. In one embodiment, the capacitor dielectric includes at least one SiO dielectric portion and at least one SiN dielectric portion and a total capacitive area includes the SiN and SiO dielectric portions arranged such that the ratio of the area of the SiO portions to the area of the SiN portions is about 1.15:1.

主权项

1. A MIM (metal insulator metal) capacitive device in a semiconductor device, said capacitive device disposed adjacent a substrate and comprising at least two separated and electrically isolated electrodes, and at least one SiN dielectric portion and at least one SiO dielectric portion between said at least two electrically isolated electrodes and said electrically isolated electrodes include a first electrode and a second electrode, said first electrode disposed between said substrate and said second electrode.