| 发明名称 |
Charged-Particle-Beam Patterning Without Resist |
| 摘要 |
A process for fabricating an integrated circuit is provided. The process includes providing a substrate, forming a hard mask upon the substrate by one of atomic-layer deposition and molecular-layer deposition, and exposing the hard mask to a charged particle from one or more charged particle beams to pattern a gap in the hard mask. In the alternative, the process includes exposing the hard mask to a charged particle from one or more charged-particle beams to pattern a structure on the hard mask. |
| 申请公布号 |
US2015221514(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201414304691 |
申请日期 |
2014.06.13 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. ;National Taiwan University |
发明人 |
Tsai Kuen-Yu;Chen Miin-Jang;Pan Samuel C. |
| 分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A process for fabricating an integrated circuit, comprising:
providing a substrate; forming a hard mask upon the substrate by one of atomic-layer deposition and molecular-layer deposition; and exposing the hard mask to a charged particle from one or more charged particle beams to pattern a gap in the hard mask. |
| 地址 |
Hsin-Chu TW |
