NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE

摘要

A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.

主权项

1. A memory system, comprising:
a nonvolatile memory device including a three-dimensional array structure comprising a plurality of memory blocks, wherein each of the plurality of memory blocks includes a plurality of charge trap memory cells, each of the plurality of memory cells comprising a charge storage layer formed of an insulation film and connected to a plurality of word lines, respectively, and a memory controller configured to control the nonvolatile memory device to close an open word line in at least one memory block by performing at least one program operation on charge trap memory cells connected to each of all word lines between the open word line and a string selection line, after a program operation on the at least one memory block is performed, wherein the open word line is a first word line adjacent to a second word line, wherein the first word line is connected to N-step programmed charge trap memory cells, N being a positive integer, wherein the second word line is connected to M-step programmed charge trap memory cells, M being an integer less than the N.