发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND POWER SUPPLY SYSTEM
摘要 This semiconductor integrated circuit device is provided with: a first voltage terminal; a second voltage terminal; an output terminal; a high-side MOSFET connected between the first voltage terminal and the output terminal; a low-side MOSFET, which is connected between the output terminal and the second voltage terminal, and which has first and second gate electrodes; a drive circuit, which turns on/off the high-side MOSFET and the low-side MOSFET in a complementary manner; and a second gate electrode control circuit that forms a second gate control signal to be supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit is provided with a voltage forming circuit that supplies the second gate electrode of the low-side MOSFET with a negative voltage with respect to a voltage at the source of the low-side MOSFET.
申请公布号 WO2015114802(A1) 申请公布日期 2015.08.06
申请号 WO2014JP52286 申请日期 2014.01.31
申请人 RENESAS ELECTRONICS CORPORATION 发明人 KONDO, DAISUKE;TATENO, KOJI;KISHITA, YUMI;UNO, TOMOAKI
分类号 H03K17/687;H02M1/00;H02M3/00;H02M3/135;H03K17/695 主分类号 H03K17/687
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