发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which controls a thickness of a heat dissipating resin with high accuracy even when the semiconductor device is formed in a shape having a gap between a projecting part of a heat spreader around a chip and a top face of a wiring board.SOLUTION: A semiconductor device manufacturing method comprises the steps of: preparing a wiring board 10 having a first surface where a plurality of first electrodes are formed and a second surface on the side opposite to the first surface, where a plurality of second electrodes are formed; mounting a semiconductor chip 22 having a first principal surface where a plurality of bumps are formed and a second principal surface which is a surface on the side opposite to the first principal surface on the first surface of the wiring board in a manner such that the first surface of the wiring board and the first principal surface of the semiconductor chip are opposed to each other, and electrically connecting the plurality of bump electrodes of the semiconductor chip and the plurality of first electrodes of the wiring board, respectively; arranging a heat spreader on the second principal surface of the semiconductor chip; and arranging a plurality of solder balls on the plurality of second electrodes of the wiring board, respectively, and electrically connecting the second electrodes and the solder balls with each other after the above-described process.
申请公布号 JP2015144308(A) 申请公布日期 2015.08.06
申请号 JP20150075756 申请日期 2015.04.02
申请人 RENESAS ELECTRONICS CORP 发明人 HAYASHI EIJI;GO TSUTOMU;HARADA KOZO;BABA SHINJI
分类号 H01L23/12 主分类号 H01L23/12
代理机构 代理人
主权项
地址
您可能感兴趣的专利